IRFU15N20D |
RFQ for IRFU15N20D Required Field |
 |
| Technical/Catalog Information | IRFU15N20DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 3W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU15N20DPBF IRFU15N20DPBF |
| Product | Manufacturers | Pack | D/C |
| IRFU15N20D | - | TO-251 | 05+ |
Typical Application |
Features |
| ·High frequency DC-DC converters | ·Low Gate-to-Drain Charge to Reduce Switching Losses·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)·Fully Characterized Avalanche Voltage and Current |
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
12 | |
|
IDM |
Pulsed Drain Current |
68 | |
|
PD @TA = 25°C |
Power Dissipation |
140 |
|
|
PD @TC = 25°C |
Power Dissipation* |
3.0 |
W |
|
Linear Derating Factor |
0.96 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
± 30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
8.3 |
V/ns |
|
TJ |
Operating Junction and |
-55 to + 175 |
°C |
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